2006. 8. 8 1/2 semiconductor technical data PF1010DF8 silicon planar type diode revision no : 2 for emi filtering and esd protection. features emi/rfi filtering. esd protection to iec 61000-4-2 level 4. low insertion loss. good attenuation of high frequency signals. low clamping voltage. low operating and leakage current. four elements in one package applications cell phone handsets. rf communications equipment. maximum rating (ta=25 ) 1 4 5 8 0. 5 top view bottom view side view dfn-8 millimeters c c e e f f i i g g h h h d d a b a b dim 0.2 0.02 + _ 0.23 0.05 + _ 0.75 0.05 + _ 0.35 0.05 + _ 2.0 0.05 + _ 2.0 0.05 + _ 0.6 0.05 + _ 1.2 0.05 + _ gnd pad 1,8 : filter channel 1 2,7 : filter channel 2 3,6 : filter channel 3 4,5 : filter channel 4 electrical characteristics (ta=25 ) characteristic symbol rating unit power dissipation p d 300 mw operating temperature t j -55 150 storage temperature t stg -55 150 gnd 10pf 100 ? 10pf filtern* filtern* characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =1ma 6 - - v reverse leakage current i r v rwm =3v - - 0.1 a cutoff frequency f 3db v r =0v, z source =50 , z load =50 - 150 - mhz attenuation frequency f 25db v r =0v, z source =50 , z load =50 800 - 3,000 mhz resistance r between input and output - 100 - capacitance c v r =2.5v, between i/o pins and gnd - 20 - pf equivalent circuit
2006. 8. 8 2/2 PF1010DF8 revision no : 2 c j - v r reverse voltage v r (v) 13 24 capacitance c j (pf) 5 0 10 15 5 20 25 s 21 - f insertion loss (db) -45 -10 1 10 100 1000 6000 frequency (mhz) -40 -35 -30 -25 -5 0 -20 5 -15
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